Light emitting diode structure

ABSTRACT

A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims thepriority benefit of U.S. application Ser. No. 15/871,891, filed on Jan.15, 2018, now allowed. The prior U.S. application Ser. No. 15/871,891 isa continuation application of and claims the priority benefit of U.S.application Ser. No. 14/019,553, filed on Sep. 6, 2013, now patented,which claims the priority benefit of Taiwan application serial no.102125578, filed on Jul. 17, 2013. The entirety of each of theabove-mentioned patent applications is hereby incorporated by referenceherein and made a part of specification.

BACKGROUND OF THE INVENTION Field of the Invention

The invention relates to a semiconductor structure. More particularly,the invention relates to a light emitting diode structure.

Description of Related Art

Generally speaking, when fabricating a light emitting diode wafer, asubstrate is usually provided first for an epitaxial structure to beformed on the substrate by using a method of an epitaxial growth. Then,electrodes are arranged on the epitaxial structure to provide electricenergy, so as to emitting lights by using photoelectric effects. Afterthat, pluralities of interlacing scribe lines are formed in theepitaxial structure via photolithographic and etching techniques,wherein two adjacent longitudinal scribe lines and two adjacenttransverse scribe lines together define a light emitting diode die.Afterwards, grinding and cutting processes are performed to divide thelight emitting diode wafer into plural light emitting diode dice, suchthat a light emitting diode is manufactured.

In order to increase light-emitting efficiency of a light emittingdiode, the conventional technique is used to dispose an ohmic contactlayer, a reflective layer and a barrier layer in sequence, wherein theohmic contact layer, the reflective layer and the barrier layer onlycover a part of the epitaxial structure. Although the aforesaid methodcan increase light-emitting efficiency of a light emitting diode, thelight-emitting efficiency is no longer up to par. Therefore, how toefficiently increase light-emitting efficiency of a light emitting diodeis an issue required to be solved.

SUMMARY OF THE INVENTION

The invention provides a light emitting diode structure, which hasexcellent light-emitting efficiency.

A light emitting diode structure of the invention includes a substrate,a semiconductor epitaxial layer and a reflective conductive structurelayer. The semiconductor epitaxial layer is disposed on the substrateand exposes a portion of the substrate. The reflective conductivestructure layer covers a part of the semiconductor epitaxial layer andthe portion of the substrate exposed by the semiconductor epitaxiallayer.

In an embodiment of the invention, the aforesaid semiconductor epitaxiallayer includes a first type semiconductor layer, a light emitting layerand a second type semiconductor layer disposed sequentially on thesubstrate.

In an embodiment of the invention, the aforesaid reflective conductivestructure layer includes a transparent conductive layer, a reflectivelayer and a barrier layer disposed sequentially.

In an embodiment of the invention, an edge of the aforesaid barrierlayer is leveled with an edge of the substrate.

In an embodiment of the invention, the substrate has an upper surfaceand an annular tilt surface connecting to the upper surface, and thebarrier layer extends from the upper surface to cover the annular tiltsurface.

In an embodiment of the present invention, the aforesaid substrate hasan upper surface and an annular tilt surface connecting to the uppersurface. A transparent conductive layer, a reflective layer and abarrier layer extend from the upper surface to cover the annular tiltsurface. An edge of the transparent conductive layer, and edge of thereflective layer and an edge of the barrier layer are leveled with anedge of the substrate.

In an embodiment of the invention, the aforesaid substrate has an uppersurface and an annular tilt surface connecting to the upper surface. Atransparent conductive layer, a reflective layer and a barrier layerextend from the upper surface to cover the annular tilt surface andconverge to one same position.

In an embodiment of the invention, a material of the aforesaidtransparent conductive layer is selected from one of groups consistingof indium tin oxide, aluminum doped zinc oxide, indium zinc oxide and acombination thereof.

In an embodiment of the invention, a material of the aforesaidreflective layer is selected from one of groups consisting of silver(Ag), chromium (Cr), nickel (Ni), aluminum (Al) and a combinationthereof.

In an embodiment of the invention, the aforesaid reflective layer is adistributed Bragg reflector (DBR).

In an embodiment of the invention, a material of the aforesaid barrierlayer is selected from one of groups consisting of titanium-tungstenalloy, titanium (Ti), tungsten (W), titanium nitride (TiN), tantalum(Ta), chromium (Cr), chromium-copper alloy, titanium nitride and acombination thereof.

In an embodiment of the invention, the aforesaid light emitting diodestructure further includes an insulating layer. The insulating layer isdisposed between a substrate and a reflective conductive structurelayer, and between a semiconductor epitaxial layer and a reflectiveconductive structure layer.

In an embodiment of the invention, the aforesaid light emitting diodestructure further includes a first electrode, a second electrode, and aninterconnecting layer. The semiconductor epitaxial layer has a sunkenarea, and the sunken area divides the semiconductor epitaxial layer intoa first semiconductor block and a second semiconductor block. The firstelectrode is disposed on the first semiconductor block. The secondelectrode is disposed on the second semiconductor block. Theinterconnecting layer is disposed in the sunken area, and iselectrically connected the first electrode with the semiconductorepitaxial layer.

In an embodiment of the invention, the aforesaid light emitting diodestructure further includes an electrical insulating layer. Theelectrical insulating layer is at least disposed between the firstelectrode and the reflective conductive structure layer, and between theinterconnecting layer and the reflective conductive structure layer.

In an embodiment of the invention, a material of the aforesaid firstelectrode is different from a material of an interconnecting layer.

In light of the foregoing, since the light emitting diode structure ofthe invention has a reflective conductive structure layer, and thereflective conductive structure layer covers a part of the semiconductorepitaxial layer and a portion of the substrate exposed by thesemiconductor epitaxial layer, the reflective conductive structure layeris capable of effectively reflecting lights from the semiconductorepitaxial layer, and the portion of the substrate exposed by thesemiconductor epitaxial layer also has reflecting effects. Thus, anarrangement of the reflective conductive structure layer can effectivelyenlarge reflective areas and can further effectively increaselight-emitting efficiency of the light emitting diode structure as awhole.

Several exemplary embodiments accompanied with figures are described indetail below to further describe the invention in details.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate embodiments of thedisclosure and, together with the description, serve to explain theprinciples of the invention.

FIG. 1 is a cross-sectional view illustrating a light emitting diodestructure according to an embodiment of the invention.

FIG. 2 is a cross-sectional view illustrating a light emitting diodestructure according to another embodiment of the invention.

FIG. 3 is a cross-sectional view illustrating a light emitting diodestructure according to another embodiment of the invention.

FIG. 4 is a cross-sectional view illustrating a light emitting diodestructure according to another embodiment of the invention.

DESCRIPTION OF EMBODIMENTS

FIG. 1 is a cross-sectional view illustrating a light emitting diodestructure according to an embodiment of the invention. Referring to FIG.1, in the present embodiment, a light emitting diode structure 100 aincludes a substrate 110 a, a semiconductor epitaxial layer 120 a and areflective conductive structure layer 130 a. The semiconductor epitaxiallayer 120 a is disposed on the substrate 110 a, and exposes a portion ofthe substrate 110 a (dotted circular lines A as shown in FIG. 1). Thereflective conductive structure layer 130 a is disposed on thesemiconductor epitaxial layer 120 a, wherein the reflective conductivestructure layer 130 a covers a part of the semiconductor epitaxial layer120 a and the portion of the substrate 110 a exposed by thesemiconductor epitaxial layer 120 a.

More specifically, in the present embodiment, the substrate 110 a, forexample, is a sapphire substrate. However, the invention is not limitedthereto. The substrate 110 a has an upper surface 112 a. Thesemiconductor epitaxial layer 120 a includes a first type semiconductorlayer 122 a, a light emitting layer 124 a and a second typesemiconductor layer 126 a disposed on the substrate 110 in sequence.Here, the first type semiconductor layer 122 a, for example, is anN-type semiconductor layer, while the second type semiconductor layer126 a, for example, is a P-type semiconductor layer. However, theinvention is not limited thereto. As shown in FIG. 1, the semiconductorepitaxial layer 120 a does not completely cover the upper surface 112 aof the substrate 110 a. Instead, the semiconductor epitaxial layer 120 aexposes a portion of the upper surface 112 a of the substrate 110 a.

Particularly, the reflective conductive structure layer 130 a of thepresent embodiment is composed of a transparent conductive layer 132 a,a reflective layer 134 a and a barrier layer 136 a disposed in sequence.The transparent conductive layer 132 a can be deemed as an ohmic contactlayer, and the purpose of the transparent conductive layer 132 a is toincrease the current conduction and so that the current can be uniformlydispersed. Herein, the transparent conductive layer 132 a is disposed onthe semiconductor epitaxial layer 120 a and cover the upper surface 112a of the substrate 110 a exposed by the semiconductor epitaxial layer120 a. Here, a material of the transparent conductive layer 132 a isselected from one of groups consisting of indium tin oxide, aluminumdoped zinc oxide, indium zinc oxide and a combination thereof. Thetransparent conductive layer 132 a of the present embodiment is composedof indium tin oxide. The reflective layer 134 a is disposed on thetransparent conductive layer 132 a. The reflective layer 134 a iscapable of reflecting lights from the semiconductor epitaxial layer 120a to the substrate 110 a. When the light emitting diode structure 100 aof the invention is applied to, for example, a flip-chip light emittingdiode, light-emitting efficiency is better improved. Here, a material ofthe reflective layer 134 a is selected from a group consisting of silver(Ag), chromium (Cr), nickel (Ni), aluminum (Al) and a combinationthereof. Or, the reflective layer 134 a, for example, is a distributedBragg reflector (DBR). The reflective layer 134 a of the presentembodiment is composed of silver (Ag). The barrier layer 136 a isdisposed on the reflective layer 134 a, and covers the upper surface 112a of the substrate 110 a exposed by the semiconductor epitaxial layer120 a, wherein the barrier layer 136 a not only has a reflectingfunction but also protects a structure of the reflective layer 134 a soas to prevent metal in the reflective layer 134 a from diffusing. Here,an edge of the barrier layer 136 a is leveled with an edge of thesubstrate 110 a, and a material of the barrier layer 136 a, for example,is selected from one of groups consisting of titanium-tungsten alloy(TiW), titanium (Ti), tungsten (W), titanium nitride (TiN), tantalum(Ta), chromium (Cr), chromium-copper alloy (CrCu), tantalum nitride(TaN) and a combination thereof. In the present embodiment, the barrier136 a is composed of titanium (Ti), tungsten (W) and titanium-tungstenalloy (TiW).

Moreover, the light emitting diode structure 100 a of the presentembodiment further includes an insulating layer 140 a, wherein theinsulating layer 140 a is disposed between the substrate 110 a and thereflective conductive structure layer 130 a and between thesemiconductor epitaxial layer 120 a and the reflective conductivestructure layer 130 a, so as to electrically insulating thesemiconductor epitaxial layer 120 a and the reflective conductivestructure layer 130 a effectively. As shown in FIG. 1, the insulatinglayer 140 a of the present embodiment is directly disposed on thesemiconductor epitaxial layer 120 a, and is disposed on the uppersurface 112 a of the substrate 110 a exposed by the semiconductorepitaxial layer 120 a by extending along a side wall of thesemiconductor epitaxial layer 120 a. The transparent conductive layer132 a and the reflective layer 134 a above do not completely cover theinsulating layer 140 a, and the barrier layer 136 a extends along a sidewall of the transparent conductive layer 132 a and a side wall of thereflective layer 134 a to cover the insulating layer 140 a. Here, anedge of the insulating layer 140 a is leveled with an edge of thebarrier layer 136 a and an edge of the substrate 110 a.

In addition, the light emitting diode structure 100 a of the presentembodiment further includes a first electrode 150 a, a second electrode160 a, and an interconnecting layer 170 a. The semiconductor epitaxiallayer 120 a has a sunken area C, and the sunken area C divides thesemiconductor epitaxial layer 120 a into a first semiconductor block S1and a second semiconductor block S2. The first electrode 150 a isdisposed on the first semiconductor block S1, and the second electrode160 a is disposed on the second semiconductor block S2, wherein thefirst electrode 150 a and the second electrode 160 a are electrical andare capable of providing electric energy. The interconnecting layer 170a is disposed in the sunken area C, and is electrically connected thefirst electrode 150 a with the semiconductor epitaxial layer 120 a.Here, the first electrode 150 a and the interconnecting layer 170 a canbe fabricated with the same or different materials, preferably withdifferent materials. The material of the first electrode 150 a isselected from one of groups consisting of gold (Au), tin (Sn), gold-tinalloy and a combination thereof. The material of the interconnectinglayer 170 a is selected from one of groups consisting of chromium (Cr),platinum (Pt), gold (Au), aluminum (Al) and alloy of the aforesaidmaterials as well as a combination thereof. The first electrode 150 aand the interconnecting layer 170 a can better be electrically connectedby using different materials. However, the invention is not limitedthereto. Here, the first electrode 150 a is electrically connected tothe first type semiconductor layer 122 a of the semiconductor epitaxiallayer 120 a through the interconnecting layer 170 a, and the secondelectrode 160 a is electrically connected to the second typesemiconductor layer 126 a of the semiconductor epitaxial layer 120 athrough the reflective conductive structure layer 130 a. The lightemitting diode structure 100 a illuminates with electric energy providedby the first electrode 150 a and the second electrode 160 a.

Moreover, the light emitting diode structure 100 a further includes anelectrical insulating layer 145 a, wherein the electrical insulatinglayer 145 a at least is disposed between the first electrode 150 a andthe reflective conductive structure layer 130 a, and between theinterconnecting layer 170 a and the reflective conductive structurelayer 130 a and is configured for electrically insulating the reflectiveconductive structure layer 130 a, the interconnecting layer 170 a andthe first electrode 150 a. Here, an edge of the electrical insulatinglayer 145 a is also leveled with the edge of the barrier layer 136 a,the edge of the insulating layer 140 and the edge of the substrate 110a.

Since the light emitting diode structure 100 a of the present embodimenthas the reflective conductive structure layer 130 a, and the reflectiveconductive structure layer 130 a covers a part of the semiconductorepitaxial layer 120 a and the portion of the substrate 110 a exposed bythe semiconductor epitaxial layer 120 a, the reflective conductivestructure layer 130 a is capable of effectively reflecting lights fromthe semiconductor epitaxial layer 120 a, and allows the portion of thesubstrate 110 a exposed by the semiconductor epitaxial layer 120 a toalso has reflecting effects. Thus, when the light emitting diodestructure 100 a is applied to, for example, a design with a flip-chip,an arrangement of the reflective conductive structure layer 130 a caneffectively enlarge reflective areas and can effectively increaselight-emitting efficiency of the light emitting diode structure 100 a asa whole.

It has to be noted that, the following embodiment uses the referencenumerals and parts of the contents of the aforesaid embodiment, whereinsame reference numerals are adopted to represent the same or similarelements, and repetitive explanations of the same technical content isomitted. Concerning the omitted illustration, please refer to theaforesaid embodiment. The same technical contents are not repeated inthe following embodiment.

FIG. 2 is a cross-sectional view illustrating a light emitting diodestructure according to another embodiment of the invention. Referring toFIG. 2. A light emitting diode structure 100 b of the present embodimentis similar to the light emitting diode structure 100 a of FIG. 1.However, a discrepancy lies in that: a substrate 110 b of the presentembodiment has an upper surface 112 b and an annular tilt surface 114 bconnecting to the upper surface 112 b, wherein an insulating layer 140 band a barrier layer 136 b extend from the upper surface 112 b to coverthe annular tilt surface 114 b. As shown in FIG. 2, a transparentconductive layer 132 b and the reflective layer 134 b of a reflectiveconductive structure layer 130 b do not extend to cover the annular tiltsurface 114 b.

FIG. 3 is a cross-sectional view illustrating a light emitting diodestructure according to another embodiment of the invention. Referring toFIG. 3. A light emitting diode structure 100 c of the present embodimentis similar to the light emitting diode structure 100 b of FIG. 2.However, a discrepancy lies in that: a transparent conductive layer 132c, a reflective layer 134 c and a barrier layer 136 c of a reflectiveconductive structure layer 130 c extend from the upper surface 112 b tocover the annular tilt surface 114 b, and an edge of the transparentconductive layer 132 c, an edge of the reflective layer 134 c and anedge of the barrier layer 136 c are leveled with an edge of thesubstrate 110 b. It is designed for the reflective conductive layer 130c not only to be disposed on the upper surface 112 b of the substrate110 b, but also to extend for covering the annular tilt surface 114 b soas to enlarge reflective areas.

FIG. 4 is a cross-sectional view illustrating a light emitting diodestructure according to another embodiment of the invention. Referring toFIG. 4. A light emitting diode structure 100 d of the present embodimentis similar to the light emitting diode structure 100 b of FIG. 2.However, a discrepancy lies in that: a transparent conductive layer 132d, a reflective layer 134 d and a barrier layer 136 d of a reflectiveconductive structure layer 130 d, as well as an insulating layer 140 dand an electrical insulating layer 145 d all extend from the uppersurface 112 b to cover the annular tilt surface 114 b and converge toone same position.

In conclusion, since the light emitting diode structure of the inventionhas the reflective conductive structure layer, and the reflectiveconductive structure layer covers the part of the semiconductorepitaxial layer and the portion of the substrate exposed by thesemiconductor epitaxial layer, the reflective conductive structure layeris capable of effectively reflecting lights from the semiconductorepitaxial layer, and the portion of the substrate exposed by thesemiconductor epitaxial layer also has reflecting effects. Thus, thearrangement of the reflective conductive structure layer can effectivelyenlarge reflective areas and can further effectively increaselight-emitting efficiency of the light emitting diode structure as awhole.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of thedisclosed embodiments without departing from the scope or spirit of theinvention. In view of the foregoing, it is intended that the disclosurecover modifications and variations of this specification provided theyfall within the scope of the following claims and their equivalents.

What is claimed is:
 1. A light emitting diode structure, comprising: asubstrate having an upper surface; a semiconductor epitaxial structuredisposed on the upper surface of the substrate and exposing a portion ofthe upper surface, wherein the semiconductor epitaxial layer comprises afirst type semiconductor layer, a second type semiconductor layer and alight emitting layer disposed therebetween, and the recess is surroundedby the second type semiconductor layer and the light emitting layer andexposes a portion of the first type semiconductor layer; aninterconnecting layer disposed in the recess and electrically connectedto the first type semiconductor layer of semiconductor epitaxialstructure; a first insulating layer covering the semiconductor epitaxialstructure and the portion of the upper surface of the substrate andexposing a portion of the interconnecting layer; a conductive layerdisposed on at least a portion of the semiconductor epitaxial structureand electrically connected to the semiconductor epitaxial structure; adistributed Bragg reflector layer disposed on the conductive layer, thefirst insulating layer and covering the semiconductor epitaxialstructure and exposing the portion of the first type semiconductorlayer, wherein the interconnecting layer in the recess is spaced fromthe distributed Bragg reflector layer, and the portion of the uppersurface of the substrate is at least partially covered by thedistributed Bragg reflector layer; a second insulating layer disposed onthe distributed Bragg reflector layer and covering the semiconductorepitaxial structure and the portion of the upper surface of thesubstrate, and exposing a portion of the interconnecting layer; a firstelectrode disposed on the distributed Bragg reflector layer andelectrically connected to the semiconductor epitaxial structure throughthe interconnecting layer; and a second electrode disposed on thedistributed Bragg reflector layer and electrically connected to thesemiconductor epitaxial structure through the conductive layer.
 2. Thelight emitting diode structure as claimed in claim 1, further comprisinga barrier layer disposed between the distributed Bragg reflective layerand the second insulating layer, wherein the second electrode iselectrically connected to the semiconductor epitaxial structure throughthe barrier layer and conductive layer.
 3. The light emitting diodestructure as claimed in claim 2, wherein the barrier layer covers aportion of the upper surface of the substrate.
 4. The light emittingdiode structure as claimed in claim 3, wherein a material of the barrierlayer comprises titanium-tungsten alloy, titanium (Ti), tungsten (W),titanium nitride (TiN), tantalum (Ta), chromium (Cr), chromium-copperalloy, titanium nitride or combinations thereof.
 5. The light emittingdiode structure as claimed in claim 1, wherein a material of the firstelectrode comprises gold (Au), tin (Sn), gold-tin alloy or combinationsthereof.
 6. The light emitting diode structure as claimed in claim 1,wherein a material of the interconnecting layer comprises chromium (Cr),platinum (Pt), gold (Au), aluminum (Al) and alloy of the aforesaidmaterials or combinations thereof.
 7. A light emitting diode structure,comprising: a substrate having an upper surface; a semiconductorepitaxial structure disposed on the upper surface of the substrate andexposing a portion of the upper surface, wherein the semiconductorepitaxial layer comprises a first type semiconductor layer, a secondtype semiconductor layer and a light emitting layer disposedtherebetween, and the recess is surrounded by the second typesemiconductor layer and the light emitting layer and exposes a portionof the first type semiconductor layer; an interconnecting layer disposedin the recess and electrically connected to the first type semiconductorlayer of semiconductor epitaxial structure; a first insulating layercovering the semiconductor epitaxial structure and the portion of theupper surface of the substrate and exposing a portion of an uppersurface of the interconnecting layer; a conductive layer at leastpartially disposed on and electrically connected to the semiconductorepitaxial structure; a distributed Bragg reflector layer disposed on theconductive layer, the first insulating layer and exposing at least aportion of the recess, and at least partially covering the portion ofthe upper surface of the substrate; a reflective layer disposed on thedistributed Bragg reflector layer; a first electrode disposed on thereflector layer and the distributed Bragg reflector layer, andelectrically connected the semiconductor epitaxial structure through theinterconnecting layer; and a second electrode disposed on the reflectorlayer and the distributed Bragg reflector layer, and electricallyconnected to the semiconductor epitaxial structure through theconductive layer.
 8. The light emitting diode structure as claimed inclaim 7, further comprising a second insulating layer disposed on thedistributed Bragg reflector layer and covering the portion of the uppersurface of the substrate, wherein the second insulating layer covers aportion of the recess and exposes the portion of the upper surface ofthe interconnecting layer.
 9. The light emitting diode structure asclaimed in claim 7, wherein the reflector layer is disposed between thedistributed Bragg reflective layer and the second insulating layer, andat least partially covers the portion of the upper surface of thesubstrate.
 10. The light emitting diode structure as claimed in claim 7,wherein a material of the reflector layer comprises titanium-tungstenalloy, titanium (Ti), tungsten (W), titanium nitride (TiN), tantalum(Ta), chromium (Cr), chromium-copper alloy, titanium nitride or acombinations thereof.
 11. The light emitting diode structure as claimedin claim 7, wherein a material of the interconnecting layer compriseschromium (Cr), platinum (Pt), gold (Au), aluminum (Al) and alloy of theaforesaid materials or combinations thereof.
 12. The light emittingdiode structure as claimed in claim 7, wherein a material of the firstelectrode comprises gold (Au), tin (Sn), gold-tin alloy or combinationsthereof.
 13. A light emitting diode structure, comprising: a substratehaving an upper surface; a semiconductor epitaxial structure disposed onthe upper surface of the substrate and exposing a portion of the uppersurface, wherein the semiconductor epitaxial layer comprises a firsttype semiconductor layer, a second type semiconductor layer and a lightemitting layer disposed therebetween, and the recess is surrounded bythe second type semiconductor layer and the light emitting layer andexposes a portion of the first type semiconductor layer; aninterconnecting layer disposed in the recess and electrically connectedto the first type semiconductor layer of semiconductor epitaxialstructure; a first insulating layer covering the semiconductor epitaxialstructure and the portion of the upper surface of the substrate andexposing a portion of the interconnecting layer; a conductive layer atleast partially disposed on and electrically connected to thesemiconductor epitaxial structure; a first reflector layer at leastpartially covering the semiconductor epitaxial layer and the conductivelayer; a second reflector layer disposed on the first reflector layer,first insulating layer and covering the portion of the upper surface ofthe substrate; a second insulating layer disposed on the first reflectorlayer and second reflector layer, and covering the semiconductorepitaxial structure, the portion of the upper surface of the substrateand a portion of the recess and exposing a portion of theinterconnecting layer; a first electrode disposed on the firstinsulating layer, the second insulating layer and the second reflectorlayer, and electrically connected to the semiconductor epitaxialstructure through interconnecting layer; and a second electrode disposedon the first insulating layer, the second insulating layer and thesecond reflector layer, and electrically connected to the semiconductorepitaxial structure through first reflector layer.
 14. The lightemitting diode structure as claimed in claim 13, wherein the firstreflector layer comprises a metal reflective layer or a distributedBragg reflector.
 15. The light emitting diode structure as claimed inclaim 13, wherein the second reflector layer comprises a metal diffusingbarrier layer.
 16. The light emitting diode structure as claimed inclaim 13, wherein a material of the conductive layer comprises indiumtin oxide, aluminum doped zinc oxide, indium zinc oxide or combinationsthereof.
 17. The light emitting diode structure as claimed in claim 15,wherein a material of the second reflector layer comprisestitanium-tungsten alloy, titanium (Ti), tungsten (W), titanium nitride(TiN), tantalum (Ta), chromium (Cr), chromium-copper alloy, titaniumnitride or combinations thereof.
 18. The light emitting diode structureas claimed in claim 13, wherein a material of the first electrodecomprises gold (Au), tin (Sn), gold-tin alloy or combinations thereof.19. The light emitting diode structure as claimed in claim 13, wherein amaterial of the interconnecting layer comprises chromium (Cr), platinum(Pt), gold (Au), aluminum (Al) and alloy of the aforesaid materials orcombinations thereof.
 20. The light emitting diode structure as claimedin claim 13, wherein the first reflector layer comprises a metalreflective layer comprising chromium (Cr), platinum (Pt), gold (Au),aluminum (Al) and alloy of the aforesaid materials or combinationsthereof.